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    MOSFET 064 Search Results

    MOSFET 064 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 064 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET


    Original     		24N60C5M O-220 PDF

    10N60C5M

    Abstract: kw0649 IGBT GS c16tj 10N60C
    Text: Advanced Technical Information IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET Conditions


    Original     		10N60C5M O-220 10N60C5M kw0649 IGBT GS c16tj 10N60C PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original     		20N60C5M O-220 PDF

    10N60C

    Abstract: C3525
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET


    Original     		10N60C5M O-220 10N60C C3525 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original     		13N60C5M O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 ABFP D G D S G S Features MOSFET


    Original     		10N60C5M O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET


    Original     		24N60C5M O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original     		24N60C5M O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKP 10N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 AB D G D S G S Features MOSFET Conditions VDSS TVJ = 25°C


    Original     		10N60C5 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKH 70N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 70 A VDSS = 600 V RDS on max = 0.045 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S  D(TAB) Features MOSFET Conditions


    Original     		70N60C5 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions


    Original     		20N60C5M O-220 PDF

    10N60C

    Abstract: No abstract text available
    Text: IXKP 10N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Conditions VDSS TVJ = 25°C


    Original     		10N60C5 O-220 10N60C PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions


    Original     		13N60C5M O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original     		20N60C5M O-220 PDF

    10N60C

    Abstract: No abstract text available
    Text: IXKP 10N60C5 Advanced Technical Information ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Conditions VDSS TVJ = 25°C


    Original     		10N60C5 O-220 10N60C PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKC 23N60C5 Advanced Technical Information ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM


    Original     		23N60C5 ISOPLUS220TM E72873 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKC 15N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original     		15N60C5 ISOPLUS220TM E72873 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKC 19N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 19 A VDSS = 600 V RDS on max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original     		19N60C5 ISOPLUS220TM E72873 PDF

    19n60

    Abstract: No abstract text available
    Text: IXKC 19N60C5 Advanced Technical Information ID25 = 19 A VDSS = 600 V RDS on max = 0.125 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM


    Original     		19N60C5 ISOPLUS220TM E72873 19n60 PDF

    PVG612

    Abstract: PVG612S 0-60V PVG612S-T
    Text: Previous Datasheet Index Next Data Sheet PD 1.035A Series PVG612 Microelectronic Power IC Relay Single Pole, Normally Open, 0-60V, 1.0A AC/ 2.0 A DC HEXFET Power MOSFET Photovoltaic Relay General Description PVG612 Features HEXFET Power MOSFET output •


    Original     		PVG612 PVG612 PVG612S 0-60V PVG612S-T PDF

    19n60

    Abstract: No abstract text available
    Text: IXKC 19N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 19 A VDSS = 600 V RDS on max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original     		19N60C5 ISOPLUS220TM E72873 19n60 PDF

    GS54

    Abstract: No abstract text available
    Text: IXKC 15N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original     		15N60C5 ISOPLUS220TM E72873 GS54 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKC 15N60C5 Advanced Technical Information ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM


    Original     		15N60C5 ISOPLUS220TM E72873 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. 1.044 International HSR Rectifier Series PVT322A Microelectronic Power IC Relay Dual Pole, Normally Open 0-250V, 170mA AC/DC HEXFET POWER MOSFET PHOTOVOLTAIC RELAY PVT322A Features General Description HEXFET Power MOSFET output. Bounce-free operation •


    OCR Scan     		PVT322A 170mA PVT322A PDF