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    MPS2907 REPLACEMENT Search Results

    MPS2907 REPLACEMENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    25LS2518PC Rochester Electronics LLC Replacement for AMD part number AM25LS2518PC. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    74LS491ANS Rochester Electronics LLC Replacement for AMD part number SN74LS491ANS. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    9519A-1JC Rochester Electronics LLC Replacement for AMD part number AM9519A-1JC. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    2147-55/BYA Rochester Electronics LLC Replacement for AMD part number AM2147-55/BYA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    25S18FM/B Rochester Electronics LLC Replacement for AMD part number AM25S18FMB. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy

    MPS2907 REPLACEMENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mps2907 replacement

    Abstract: BC237 motorola 2n4033 Transistor 2N3019
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors MPS2907 MPS2907A* PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol MPS2907 MPS2907A Unit Collector – Emitter Voltage VCEO –40 –60 Vdc


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    PDF MPS2907 MPS2907A* MPS2907 MPS2907A 226AA) Therma218A MSC1621T1 MSC2404 MSD1819A MV1620 mps2907 replacement BC237 motorola 2n4033 Transistor 2N3019

    j305 replacement

    Abstract: BC237 mps2907 replacement BC109C replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 Silicon Tuning Diode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical


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    PDF MMBV3102LT1 236AB) t218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 j305 replacement BC237 mps2907 replacement BC109C replacement

    2n3819 replacement

    Abstract: 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Device


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    PDF MMBV809LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n3819 replacement 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265

    2n3819 replacement

    Abstract: transistor TO-92 bc108 mps2907 replacement BC237 BC109C replacement BF245 bf245 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV409LT1 MV409 Silicon Tuning Diodes These devices are designed for general frequency control and tuning applications. They provide solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Devices


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    PDF MMBV409LT1 MV409 236AB) 8218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 2n3819 replacement transistor TO-92 bc108 mps2907 replacement BC237 BC109C replacement BF245 bf245 replacement

    2n3819 replacement

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV105GLT1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods.


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    PDF MMBV105GLT1 236AB) EL218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 2n3819 replacement BC237

    2n3819 replacement

    Abstract: transistor equivalent book 2N5401 BC237 MPS918 equivalent mps2907 replacement 2n3819 equivalent transistor bf245 replacement 2N5551 SOT-23 transistor equivalent CT 2n5551 j305 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid–state reliability in replacement of mechanical


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    PDF MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 MV2104 MV2105 MV2108 2n3819 replacement transistor equivalent book 2N5401 BC237 MPS918 equivalent mps2907 replacement 2n3819 equivalent transistor bf245 replacement 2N5551 SOT-23 transistor equivalent CT 2n5551 j305 replacement

    2n3019 replacement

    Abstract: BC237 MV209 diode mps2907 replacement 2n3819 replacement K 2056 transistor 6-SOT-23 marking 27 OF transistor 2N2222 to-92
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBV109T1 MMBV109LT1* MV209* Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechnaical tuning methods. * Motorola Preferred Devices


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    PDF 70/SOT MBV109T1 MMBV109LT1* MV209* R218A MSC1621T1 MSC2404 MSD1819A MV1620 2n3019 replacement BC237 MV209 diode mps2907 replacement 2n3819 replacement K 2056 transistor 6-SOT-23 marking 27 OF transistor 2N2222 to-92

    2N16

    Abstract: BC237 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.


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    PDF MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72

    2n2222 h 331 transistors

    Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


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    PDF MGSF3442XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2222 h 331 transistors 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10


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    PDF MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237

    BC237

    Abstract: MPSA06 346
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste


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    PDF MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 MMBD1000LT1 OT-23 O-236AB) V218A MSC1621T1 MSC2404 BC237 MPSA06 346

    BC237

    Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


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    PDF MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 K 2056 transistor

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r


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    PDF MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    2N643

    Abstract: BC237 MARKING DP SOT-363 DO204AA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


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    PDF MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N643 BC237 MARKING DP SOT-363 DO204AA

    BC237

    Abstract: MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


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    PDF MGSF3441XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1

    MSC2404

    Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage


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    PDF MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72

    BF245

    Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30


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    PDF MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568

    stencil

    Abstract: BC237 automatic heat detector project report BC393 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and


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    PDF BAT54T1 Ju218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 stencil BC237 automatic heat detector project report BC393 equivalent

    bs170 replacement

    Abstract: BC237 BC30 transistor K 2056
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)


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    PDF BS170 226AA) DS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 bs170 replacement BC237 BC30 transistor K 2056

    transistor bc237 bc337

    Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage


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    PDF BC337 BC338 226AA) Junction218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor bc237 bc337 replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT

    bc182 equivalent 2n2907

    Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO


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    PDF BC182 BC183 BC184 BC184 226AA) Junction218A MSC1621T1 MSC2404 bc182 equivalent 2n2907 bc183 equivalent BC237 BF245 bc184 equivalent

    transistor MPS5771

    Abstract: BC237 bfw4
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit


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    PDF MMBD914LT1 236AB) DE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 transistor MPS5771 BC237 bfw4

    P2d MARKING CODE

    Abstract: H2A transistor ev 2816 BC237 transistor 2N2906
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage


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    PDF PZTA92T1 261AA ELECTRI218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 P2d MARKING CODE H2A transistor ev 2816 BC237 transistor 2N2906

    2N5457 MOTOROLA

    Abstract: 2N5457 equivalent BC237 transistor 2N5457
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc


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    PDF 2N5457 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N5457 MOTOROLA 2N5457 equivalent BC237 transistor 2N5457