tlo34
Abstract: tl031 equivalent ic
Text: TL03x, TL03XA, TL03xY ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOSI 8O- FEBRUARY 1997 Direct Upgrades for the TL06x Low-Power BiFETs • Higher Slew Rate And Bandwidth Without Increased Power Consumption Low Power Consumption 6.5 mW/Channel Typ
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TL03x,
TL03XA,
TL03xY
TL06x
TL031A)
TL03x
TL031
tlo34
tl031 equivalent ic
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Untitled
Abstract: No abstract text available
Text: ADVANCED POWER Tec h n o lo g y APT5014LVR soov 37a o.i4on POWER MOS V Power MOS V™ is a new generation of high voltage N-Channe! enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT5014LVR
O-264
00A/ps)
MIL-STD-750
O-264AA
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Untitled
Abstract: No abstract text available
Text: A d v a n ced POWER Te c h n o l o g y APT10086SVR iooov i3a o.86oí2 POWER MOS V Power MOS Visa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT10086SVR
00A/ns)
MIL-STD-750
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Untitled
Abstract: No abstract text available
Text: • R A dvanced W /Æ POWER Te c h n o lo g y ' APT20M22JVR 200V 97A 0.022Q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT20M22JVR
OT-227
APT20M22JVR
E145592
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Untitled
Abstract: No abstract text available
Text: • R A dvan c ed W*Æ POWER Techno lo g y APT8015JVFR soov 44a o.isoq POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8015JVFR
OT-227
APT8015JVFR
E145592
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Untitled
Abstract: No abstract text available
Text: APT6015LVFR 600V POWER MOS V 38A 0.150W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT6015LVFR
O-264
O-264
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Untitled
Abstract: No abstract text available
Text: APT6011LVFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT6011LVFR
O-264
O-264
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APT6015JVFR
Abstract: No abstract text available
Text: APT6015JVFR 600V POWER MOS V 35A 0.150W FREDFET S S ® Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS
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APT6015JVFR
E145592
OT-227
APT6015JVFR
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Untitled
Abstract: No abstract text available
Text: APT6030BVFR 600V POWER MOS V 21A 0.300W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT6030BVFR
O-247
O-247
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APT50M80B2VFR
Abstract: ED 58A
Text: APT50M80B2VFR 500V POWER MOS V 58A 0.080W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M80B2VFR
Current031)
MIL-STD-750
APT50M80B2VFR
ED 58A
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APT10M11LVR
Abstract: No abstract text available
Text: APT10M11LVR 0.011Ω 100V 100A POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10M11LVR
O-264
O-264
APT10M1LVR
APT10M11LVR
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APT1001RBVR
Abstract: No abstract text available
Text: APT1001RBVR 11A 1.000Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT1001RBVR
O-247
O-247
APT1001RBVR
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APT1001RBVFR
Abstract: No abstract text available
Text: APT1001RBVFR 11A 1.000Ω 1000V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT1001RBVFR
O-247
O-247
APT1001RBVFR
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APT20M45SVFR
Abstract: No abstract text available
Text: APT20M45SVFR 56A 0.045Ω 200V POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT20M45SVFR
MIL-STD-750
APT20M45SVFR
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sony f190
Abstract: 1403M sony power amplifier
Text: SONY CXG1020N Power Amplifier for PHS Description The CXG1020N is a power amplifier MMIC for PHS, This IC is designed using the Sony's GaAs JFET process and operates at a single 3 V power supply. Features • Singfe positive power supply operation Voo=3.2 V
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CXG1020N
CXG1020N
GGlbb23
SSOP-SP-L01
SSOPG0S-P-0044
sony f190
1403M
sony power amplifier
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Untitled
Abstract: No abstract text available
Text: APT12045L2VR 1200V 28A 0.450Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT12045L2VR
O-264
APT12045L2VR
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APT10050LVR
Abstract: No abstract text available
Text: APT10050LVR 21A 0.500Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10050LVR
O-264
O-264
APT10050LVR
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Untitled
Abstract: No abstract text available
Text: APT1201R5BVR 1200V 10A 1.500Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT1201R5BVR
O-247
O-247
30TO-SOURCE
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APT10086BVR
Abstract: No abstract text available
Text: APT10086BVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10086BVR
O-247
O-247
APT10086BVR
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Untitled
Abstract: No abstract text available
Text: APT6025SVR 600V 25A 0.250W POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT6025SVR
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Untitled
Abstract: No abstract text available
Text: APT12045L2VFR 1200V 28A 0.450Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT12045L2VFR
O-264
O-264
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APT12080LVR
Abstract: 1200v diode
Text: APT12080LVR 16A 0.800Ω 1200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT12080LVR
O-264
O-264
APT12080LVR
1200v diode
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APT1001RSVR
Abstract: No abstract text available
Text: APT1001RSVR 11A 1.000Ω 1000V POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT1001RSVR
APT1001RSVR
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APT8030LVR
Abstract: No abstract text available
Text: APT8030LVR 800V 27A 0.300Ω POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT8030LVR
O-264
O-264
APT8030LVR
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