Untitled
Abstract: No abstract text available
Text: KMM5321200AW D RAM Module ELECTRONICS KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321200AW consists of two CMOS
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OCR Scan
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KMM5321200AW
KMM5321200AW/AWG
1Mx32
1Mx16
KMM5321200AW
42-pin
72-pin
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PDF
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KM428C128
Abstract: No abstract text available
Text: PRELIMINARY CMOS VIDEO RAM KM428C128 SAMSUNG ELECTRONICS INC 7 = ^ 4 1 4 2 OaiGbMb T 42E D 128KX8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 128K X 8 bits RAM port 256 X 8 bits SAM port • Performance The Samsung KM 428C128 is a CMOS 12 8 K X 8 bit Dual
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OCR Scan
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KM428C128
128KX8
428C128
150ns
180ns
75ansfer
D01QL7S
40-PIN
KM428C128
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E » • 7 % 4 1 H E D01bb52 SSI KM428C256, KM428V256 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION ■ Dual port Architecture 256K x 8 bits RAM port 512x8 bits SAM port • Performance range : The Samsung KM428C/V256 is a CMOS 256K x 8 bit Dual
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OCR Scan
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D01bb52
KM428C256,
KM428V256
512x8
KM428C/V256
110ns
130ns
150ns
50nsCYCLE
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PDF
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Untitled
Abstract: No abstract text available
Text: PC66 SDRAM MODULE KM M366S424CTF KMM366S424CTF SDRAM DIMM 4M x6 4 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous D RAM s with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424CTF is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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M366S424CTF
KMM366S424CTF
4Mx16,
400mil
168-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KMM5401000B/BG GD1514b 523 I SP1GK DRAM MODULES 1Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5401000B is a 1M bitsx40 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM5401000B/BG
GD1514b
1Mx40
KMM5401000B
bitsx40
20-pin
72-pin
110ns
KMM5401000B-7
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC L7E D • 7^4142 KMM540512CM DD1 S D 7 0 ‘I b i DRAM MODULES 512Kx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM540512CM isa512Kbitsx40 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM540512CM
512Kx40
KMM540512CM
isa512Kbitsx40
256Kx4
20-pin
72-pin
KMM540512CM-6
KMM540512CM-7
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E ]> QD1SSSQ ^35 I SMGK • KM M5324000V/VG/VP DRAM MODULES 4M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324000V is a 4M bitsx32 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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M5324000V/VG/VP
KMM5324000V
bitsx32
24-pin
72-pin
110ns
KMM5324000V-7
130ns
KMM5324000V-8
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • Vlhima G01b7Db 22T H S M G K PRELIMINARY KM428C258 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port A rchitecture 256K x 8 b its RAM port 512 x 8 bits SAM port ■ Performance range : The Samsung KM428C258 is a CMOS 256K x 8 bit Dual
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OCR Scan
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G01b7Db
KM428C258
KM428C258
110ns
130ns
150ns
40-PIN
40/44-PIN
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PDF
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samsung LRA
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC h 4E D • TTbMlMi 0014742 4flb ■ SMÛK KMM536512W3/W3G DRAM MODULES 512K x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM536512W3 is a512K bit x 36 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM536512W3/W3G
KMM536512W3
a512K
40-pin
72-pin
22fiF
KMM536512W3-7
130ns
KMM536512W3-8
samsung LRA
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PDF
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Untitled
Abstract: No abstract text available
Text: PC 100 SDRAM MODULE KM M366S823CTS KMM366S823CTS SDRAM DIMM 8M x6 4 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous D RAM s with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S823CTS is a 8M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung
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OCR Scan
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M366S823CTS
KMM366S823CTS
400mil
168-pin
KM48S8030CT
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E » • V'ìbMmE GD1SE3T E74 KMM5916000/T DRAM MODULES 1 6 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KMM5916000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM5916000/T
KMM5916000/T
KM41C16000/T
24-pin
30-pin
22/uF
KMM5916000-6
110ns
KMM5916000-7
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • TRhMlMS DOlMMhT T6b mSt\GK KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM591000AN
591000AN
KMM591OOOAN
KM44C1OOOAJ
20-pin
KM41C1OOOBJ
30-pin
22fiF
130ns
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 DD147b3 100 KMM594100N DRAM MODULES 1 M x 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM594100N is a 4M b itx 9 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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DD147b3
KMM594100N
KMM594100N
KM44C4100J
20-pin
KM41C4000BJ
30-pin
KMM5364100N-6
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PDF
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KMM5361000
Abstract: KMM5361000/A
Text: SAMSUNG ELECTRONICS INC 42E ]> • T ^ b M m s GülGSlb Ô KMM5361000 DRAM MODULES 'T - % iï~ n 1 M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000 is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM5361000
KMM5361000
bitsX36
20-pin
72-pin
150ns
KMM5361000-10
KMM5361000-
KMM5361000/A
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELE CTRONICS INC b?E D • 7^4142 KMM584000B ODISCHb 176 ■ SM6K DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000B is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM584000B
KMM584000B
KM41C4000BJ
20-pin
30-pin
22/iF
KMM584000B-6
110ns
M584000B-7
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E J> • 7 ^ 4 1 4 5 GG151Q1 3b5 m S tlG K KMM584020B DRAM MODULES 4M x8 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584020B is a 4M bitsx8 Dynamic RAM high density memory module. The Samsung KMM584020B
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OCR Scan
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GG151Q1
KMM584020B
KMM584020B
20-pin
30-pin
KMM584020B-6
110ns
KMM584020B-7
130ns
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • 7TL,4m2 DDlbSSb TT3 « S M C K KM424C257 CMOS VIDEO RAM 256K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port * Perform ance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual
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OCR Scan
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KM424C257
110ns
130ns
150ns
28-PIN
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E 3 • 7 ^ 4 1 4 2 DDIBTTB TSG PRELIMINARY KM424C257 SMGK CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 256K x 4 b its RAM port 512 x 4 b its SAM port • Performance The Samsung KM 424C 257 is a CMOS 2 5 6 K X 4 bit Dual
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OCR Scan
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KM424C257
125ns
28-PIN
0D13625
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC m 42E D 7^4142 KMM581000B GGlüMlö ñ «SPICK DRAM MODULES i'T 'Q U ^ n 1MX8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B Is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM581000B
581000B
KMM581
KM41C1OOOBJ
20-pln
30-pin
581000B-
130ns
150ns
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PDF
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KMM581000BN
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E » • 7 i b 4 1 4 2 001S0Ö1 747 MSflGK KMM581020BN DRAM MODULES 1Mx8 DRAM SIMM Memory Module, bow Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581020BN is a 1M bitsx8 Dynamic RAM high density memory m odule. The Samsung
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OCR Scan
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001S0Ã
KMM581020BN
KMM581020BN
KMM581000BN
KM44C1000BU
20-pin
30-pin
22/tF
110ns
KMM581020BN-7
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E ]> • GG1472D AIS «SI1GK 7WIHE KMM532512W/WG DRAM MODULES 512K.X32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: The Samsung KMM532512W is a 512K bit x 3 2 Dynam ic RAM high density memory module. The Samsung
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OCR Scan
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GG1472D
KMM532512W/WG
KMM532512W
40-pin
72-pin
22jiF
130ns
150ns
180ns
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PDF
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Untitled
Abstract: No abstract text available
Text: M464S0924ETS PC133 SODIMM M464S0924ETS SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous GENERAL DESCRIPTION FEATURE The Samsung M464S0924ETS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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Original
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M464S0924ETS
M464S0924ETS
PC133
8Mx64
8Mx16,
M464S0924DTE
400mil
144-pin
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PDF
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D1377
Abstract: TCA 965 BP KM424C256A
Text: b4E D SAMSUNG ELEC TRONICS INC • CMOS VIDEO RAM KM424C256A GENERAL DESCRIPTION 256K X 4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance range: Item -6 RAM access time tmc RAM access time (tCAc)
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OCR Scan
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0G13771
KM424C256A
KM424C256A
256Kx4
28-PIN
D1377
TCA 965 BP
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E » 7 ^ 4 1 4 2 OOlSDfit 22Ì I SMGK • KMM591000BN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591000BN is a 1M b it x 9 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM591000BN
KMM591000BN
KM44C1000BJ
20-pin
KM41C1000CJ
30-pin
110ns
KMM591000BN-7
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PDF
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