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    Advanced Semiconductor Inc TC5316200CF-P147

    5316200CF-P147
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    Quest Components TC5316200CF-P147 423
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    Toshiba America Electronic Components TC5316200CF-P148

    5316200CF-P148
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    Toshiba America Electronic Components TC5316200CF-P147

    5316200CF-P147
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    Quest Components TC5316200CF-P147 23
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    Toshiba America Electronic Components TC5316200CP

    Electronic Component
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    TC5316200 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC5316200AF-15 Toshiba 16M BIT (1M WORD x 16 BIT / 2M WORD X 8 BIT) CMOS MASK ROM Scan PDF
    TC5316200AP-15 Toshiba 16M BIT (1M WORD x 16 BIT / 2M WORD X 8 BIT) CMOS MASK ROM Scan PDF
    TC5316200F-20 Toshiba 16M BIT (1M WORD x 16 BIT / 2M WORD x 8 BIT) CMOS MASK ROM Scan PDF
    TC5316200P Toshiba Toshiba Shortform Catalog Scan PDF
    TC5316200P-20 Toshiba 16M BIT (1M WORD x 16 BIT / 2M WORD x 8 BIT) CMOS MASK ROM Scan PDF

    TC5316200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MB834000

    Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel
    Text: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010


    Original     		PDF MX27C256 i27C256 Am27C256 NM27C256 M27C256 MX27C512 i27C512 Am27C512 NM27C512 M27C512 MB834000 M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel

    M5M23160

    Abstract: TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445
    Text: OKI Semiconductor Memory Cross Reference 16-Meg DRAMs OKI Part Number MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 MSM51V17400 MSM51V18160 Configuration Voltage Refresh 1 Meg x 16 4 Meg x 4 16 Meg x 1


    Original     		PDF 16-Meg MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 M5M23160 TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445

    TC5316200bP

    Abstract: TC5316200BP/BF
    Text: TOSHIBA TC5316200BP/BF SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM D escription The TC5316200BP/BF is a 16,777,216 bit read only memory organized as 1,048,576 words by 16 bits when BY I t is logical high, and organized as 2,097,152 words by 8 bits when BYTE is logical low.


    OCR Scan     		PDF TC5316200BP/BF TC5316200BP/BF 600mil 42-pin 44-pin TC5316200BP TC5316200BF

    Untitled

    Abstract: No abstract text available
    Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC5316200AP/AF 16M BIT 1M W O R D x 16 B IT / 2 M W ORD x 8 B IT C M O S M A S K RO M DESCRIPTIO N T h e T C 5 3 1 6 2 0 0 A P / A F is a 1 6 ,7 7 7 ,2 1 6 b its r e a d o n ly m e m o ry o rg a n iz e d a s 1 ,0 4 8 ,5 7 6 w o rd s b y 1 6


    OCR Scan     		PDF TC5316200AP/AF A0-A19

    Untitled

    Abstract: No abstract text available
    Text: 16M BIT 1 M W O R D x 16 B1T/2M W O R D x 8BIT C M O S M A S K R O M DESCRIPTION The TC5316200P/F is a 16,777,216 bits read only memory organized as 1,048,576 words by 16 bits when BYTE is logical high, and is organized as 2,097,152 words by 8 bits, when BYTE is logical low.


    OCR Scan     		PDF TC5316200P/F 600mil 42pin TC5316200P/Fâ DIP42â P-600.

    TC5316200CP

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA CIRCUIT TOSHIBA MOS INTEGRATED CIRCUIT TC5316200 C P/ CF / CFT Seiko Instruments Inc TECHNICAL DATA SILICON GATE CMOS 16 MBIT (1 M W O RD BY 16 BITS/2 M W O RD BY 8 BITS) CMOS MASK ROM DESCRIPTION The TC5316200CP/CF/CFT is a 16,777,216-bit Read Only Memory organized as 1,048,576 words by 16


    OCR Scan     		PDF TC5316200 TC5316200CP/CF/CFT 216-bit 42-pin 44-pin 765TYP TC5316200CP

    TC5316200CP

    Abstract: tc5316200
    Text: TOSHIBA TC5316200CP/CF/CFT PRELIMINARY SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM Description The TC5316200CP/CF/CFT is a 16,777,216 bit read only memory organized as 1,048,576 w ords by 16 bits when BY I t is logical high, or as 2,097,152 w ords by 8 bits when BYTE is logical low.


    OCR Scan     		PDF TC5316200CP/CF/CFT TC5316200CP/CF/CFT 600mil 42-pin 44-pin 400mil TC5316200CP tc5316200

    531620

    Abstract: No abstract text available
    Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC5316200BP/BF 16M BIT 1M W O R D x 16 B IT / 2 M W ORD 8 B IT C M O S M A S K R O M X D ESCRIPTIO N T h e T C 5 3 1 6 2 0 0 B P / B F is a 1 6 ,7 7 7 ,2 1 6 b its re a d on ly m em ory o rgan ize d a s 1 ,0 4 8 ,5 7 6 w ords by 16


    OCR Scan     		PDF TC5316200BP/BF A0-A19 531620

    TC5316200CP

    Abstract: tc5316200 SOP44
    Text: INTEGRATED TOSHIBA CIRCUIT TOSHIBA MOS INTEGRATED CIRCUIT TC5316200 C P/ CF / CFT Seiko Instruments Inc TECHNICAL DATA SILICON GATE CMOS 16 MBIT (1 M W O RD BY 16 BITS/2 M W O RD BY 8 BITS) CMOS MASK ROM DESCRIPTION The TC5316200CP/CF/CFT is a 16,777,216-bit Read Only Memory organized as 1,048,576 words by 16


    OCR Scan     		PDF TC5316200 TC5316200CP/CF/CFT 216-bit 42-pin 44-pin 765TYP TC5316200CP SOP44

    Untitled

    Abstract: No abstract text available
    Text: w îîisaï iijlili 16M BIT 1 M W O RD x 16 B1T/2M W O RD x 8BIT CM O S M ASK ROM DESCRIPTION The TC5316200P/F is a 16,777,216 bits read only memory organized as 1,048,576 words by 16 bits when BYTE is logical high, and is organized as 2,097,152 words by 8 bits, when BYTE is logical low.


    OCR Scan     		PDF TC5316200P/F 600mil 42pin TC5316200P/Fâ DIP42â

    TC5316200P

    Abstract: No abstract text available
    Text: TC5316200P/F 16M BIT 1M W O R D x 16 B IT /2 M W O R D x 8B IT CM O S M A SK ROM PRELIMINARY DESCRIPTION The TC5316200P/F is a 16,777,216 bits read only memory organized as ‘1,048,576 words by 16 bits when BYTE is logical high, and is organized as 2,097,152 words by 8 bits, when JBYTiS is logical low.


    OCR Scan     		PDF TC5316200P/F TC5316200P/F 600mil 42pin 200ns TC5316200P

    TC5316200CP

    Abstract: TC5316200CF
    Text: T O S H IB A TC5316200CP/CF/CFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 1 M WORD BY 16 BITS/2 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC5316200CP/CF/CFT is a 16,777,216-bit Read Only Memory organized as 1,048,576 words by 16 bits when BYTE is logical high, and as 2,097,152 words by 8 bits when BYTE is logical low.


    OCR Scan     		PDF TC5316200CP/CF/CFT TC5316200CP/CF/CFT 216-bit 42-pin 44-pin TC5316200CP TC5316200CF

    TC5716200D-150

    Abstract: 5716200D
    Text: TOSHIBA TC5716200D-150, -200 SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY D escription T heT C 5716200D is a 16,777,216 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It is


    OCR Scan     		PDF TC5716200D-150, 5716200D TC5716200D 42-pin 150ns/200ns 60rrvV6 5716200D TC5716200D. TC5716200D-150

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


    OCR Scan     		PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P

    Untitled

    Abstract: No abstract text available
    Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TENTATIVE 16M BIT 1M W O R D x 16 B 1 T /2 M WORD x 8 B IT CMOS M A S K ROM DESCRIPTION T h e T C 5 3 1 6 2 0 0 A F T is a 1 6 ,7 7 7 ,2 1 6 b its re a d on ly m em ory o rgan ize d a s 1 ,0 4 8 ,5 7 6 w ords by 16 b its


    OCR Scan     		PDF 316200A TC5316200AFT

    Untitled

    Abstract: No abstract text available
    Text: TOS H IB A LOGIC/MEMORY 42E D • cJDc)75Ma □ Q 2 1 t12b Q ■ T0S2 16M BIT (1M WORD X 16 BIT/2M WORD x 8BIT) CMOS MASK ROM ■ » n » ' 7 ^ - / 3 -J P R E L IM IN A R Y The T C 5316200A P / A F is a 16,777,216 bits read only memory organized as 1,048,576 words by 16


    OCR Scan     		PDF 316200A 600mil 42pin 100/vA( 150ns TC5316200AP/AF-- IP42--P

    AC907

    Abstract: TC5716200D
    Text: 16MEGA BIT 1,048,576 W O R D PRELIMINARY x 16BIT/2,097,152 W O R D x 8BIT C M O S U.V. ERASABLE A N D ELECTRICALLY P R O G R A M M A B LE READ ONLY M E M O R Y DESCRIPTION The TC5716200D is a 16,777,216 b it CMOS u ltra v io le t lig h t e ra s a b le an d e le c tric a lly


    OCR Scan     		PDF 16MEGA 16BIT/2 TC5716200D 150ns/200ns 60mA/6 TC5716200D. A10-A19, AC907

    16MEGA

    Abstract: TC5716200D
    Text: T C 5 7 1 6 2 0 0 D —150, - 2 0 P !• PRELIMINARY■ 16MEGA BIT 1,048,576 W ORD x 16BIT/2,097,152 WORD x 8BIT r n i.i.im ii'in n CMOS U.V. ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY D E S C R IP T IO N T h e T C 5716200D is a 16,777,216 b it CMOS u l tr a v io le t lig h t e r a s a b le a n d e le c tr ic a lly


    OCR Scan     		PDF 16MEGA 16BIT/2 TC5716200D 150ns/200ns 60mA/6 TC5716200D. A10-A19, TC5716200Dâ

    Untitled

    Abstract: No abstract text available
    Text: 16M BIT 1 M W O R D X 16 B IT /2 M W O R D X 8B IT CMOS MASK RO M PRELIMINARY DESCRIPTION T h e T C 5316200A P / A F is a 16,777,216 b its read only m em ory organized as 1,048,576 w ords by 16 b its w h e n BYTE is logical hig h , an d is organized a s 2,097,152 w ords by 8 b its w hen BYTE is logical


    OCR Scan     		PDF TC5316200AP TC5316200AP/ 600mil 42pin 150ns TC5316200AP D1P42-P-600 D8-D15

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


    OCR Scan     		PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


    OCR Scan     		PDF TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


    OCR Scan     		PDF KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v