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    TK4A60D Search Results

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    TK4A60D Price and Stock

    Toshiba America Electronic Components TK4A60D(STA4,Q,M)

    MOSFET N-CH 600V 4A TO220SIS
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    DigiKey TK4A60D(STA4,Q,M) Tube
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    Mouser Electronics TK4A60D(STA4,Q,M) 97
    • 1 $1.03
    • 10 $0.863
    • 100 $0.652
    • 1000 $0.456
    • 10000 $0.411
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    Toshiba America Electronic Components TK4A60DB(STA4,Q,M)

    MOSFET N-CH 600V 3.7A TO220SIS
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    Toshiba America Electronic Components TK4A60DA(STA4,Q,M)

    MOSFET N-CH 600V 3.5A TO220SIS
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    DigiKey TK4A60DA(STA4,Q,M) Tube
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    TME TK4A60DA(STA4,Q,M) 543 1
    • 1 $0.875
    • 10 $0.573
    • 100 $0.521
    • 1000 $0.521
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    Toshiba America Electronic Components TK4A60DAR,S4X(S

    TK4A60DAR - Power MOSFET (N-ch 500V<VDSS<700V)
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    Rochester Electronics TK4A60DAR,S4X(S 49,300 1
    • 1 $0.4167
    • 10 $0.4167
    • 100 $0.3917
    • 1000 $0.3542
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    Toshiba America Electronic Components TK4A60DB(STA4,X,S)

    TK4A60DB - TRANSISTOR (SILICON)
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    Rochester Electronics TK4A60DB(STA4,X,S) 1
    • 1 $0.8681
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    • 100 $0.816
    • 1000 $0.7379
    • 10000 $0.7379
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    TK4A60D Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK4A60D Toshiba Japanese - Transistors - Mosfets Original PDF
    TK4A60D Toshiba Transistors - Mosfets Original PDF
    TK4A60DA Toshiba Transistors - Mosfets Original PDF
    TK4A60DA Toshiba Japanese - Transistors - Mosfets Original PDF
    TK4A60DA(Q) Toshiba TK4A60DA - Trans MOSFET N-CH 600V 3.5A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK4A60DA(Q,M) Toshiba TK4A60DA - Trans MOSFET N-CH 600V 3.5A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK4A60DA(STA4,Q,M) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 3.5A TO220SIS Original PDF
    TK4A60DB(STA4,Q,M) Toshiba TK4A60DB - Trans MOSFET N-CH 600V 3.7A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK4A60D(STA4,Q,M) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 4A TO-220SIS Original PDF

    TK4A60D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    k4a60db

    Abstract: K4A60 K4A60D
    Text: TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)


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    TK4A60DB k4a60db K4A60 K4A60D PDF

    k4a60d

    Abstract: K4A60 TK4A60D
    Text: TK4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)


    Original
    TK4A60D k4a60d K4A60 TK4A60D PDF

    K4A60

    Abstract: No abstract text available
    Text: TK4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)


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    TK4A60D K4A60 PDF

    K4A60DA

    Abstract: TK4A60DA K4A60 TK4A60D K4A60D toshiba tk4a60da
    Text: TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)


    Original
    TK4A60DA K4A60DA TK4A60DA K4A60 TK4A60D K4A60D toshiba tk4a60da PDF

    K4A60D

    Abstract: K4A60
    Text: TK4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)


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    TK4A60D K4A60D K4A60 PDF

    K4A60DB

    Abstract: K4A60 TK4A60DB K4A60D
    Text: TK4A60DB 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK4A60DB ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.6 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.2 S (標準)


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    TK4A60DB K4A60DB K4A60 TK4A60DB K4A60D PDF

    Untitled

    Abstract: No abstract text available
    Text: TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK4A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)


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    TK4A60DA PDF

    K4A60

    Abstract: K4A60DA TK4A60DA K4A60D
    Text: TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)


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    TK4A60DA K4A60 K4A60DA TK4A60DA K4A60D PDF

    K4A60D

    Abstract: TK4A60D K4A60
    Text: TK4A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK4A60D ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.4 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.5 S (標準)


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    TK4A60D SC-67 2-10U1B 20070701-JA K4A60D TK4A60D K4A60 PDF

    K4A60D

    Abstract: No abstract text available
    Text: TK4A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK4A60D ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.4 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.5 S (標準)


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    TK4A60D K4A60D PDF

    Untitled

    Abstract: No abstract text available
    Text: TK4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK4A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)


    Original
    TK4A60D PDF

    Untitled

    Abstract: No abstract text available
    Text: TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)


    Original
    TK4A60DA PDF

    K4A60DA

    Abstract: TK4A60DA K4A60D K4A60 toshiba tk4a60da
    Text: TK4A60DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK4A60DA ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.7 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.2 S (標準)


    Original
    TK4A60DA SC-67 2-10U1B 20070701-JA K4A60DA TK4A60DA K4A60D K4A60 toshiba tk4a60da PDF

    K4A60DA

    Abstract: No abstract text available
    Text: TK4A60DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK4A60DA ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.7 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.2 S (標準)


    Original
    TK4A60DA K4A60DA PDF

    k4a60db

    Abstract: No abstract text available
    Text: TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)


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    TK4A60DB k4a60db PDF

    k4a60db

    Abstract: No abstract text available
    Text: TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)


    Original
    TK4A60DB k4a60db PDF

    circuit diagram of luminous inverter

    Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
    Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances


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    BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    PDF

    fast tlp785

    Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
    Text: System Catalog 2012-12 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng –2 Power Supply Circuit Types and Their Applications Switching Power Supplies AC-DC Resonant Half-Bridge Power Supplies Up to around 800 W


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    SCE0024F fast tlp785 TK10A60D 5252 F solar tcv7116 TPH1400ANH PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


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    BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


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    BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03 PDF