sf 128 transistor
Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
Text: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.
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SC73P2602
SC73P2602
SC73C16
sf 128 transistor
TRANSISTOR SF 128
Triode 8050
marking P53 transistor
ic marking k52
SC73P16
bd 8050 TRANSISTOR
part MARKING k48
marking k47
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100-P
Abstract: BUK456 BUK456-60A BUK456-60B T0220AB dm 369 rv
Text: N AMER PHILIPS/DISCRETE bTE D bbSBTBl 0030b7D LET • APX Product Specification Philips Semiconductors B U K456-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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K456-60A/B
BUK456
T0220AB
BUK456-60A/B
100-P
BUK456-60A
BUK456-60B
T0220AB
dm 369 rv
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BUK455-60A
Abstract: K455-60A BUK455-60B diode d2s BUK455 T0220AB k455
Text: N AMER PHILIPS/DISCRETE LTE D ^53^31 □□3Db4Q TTl HiAPX Product Specification Philips Semiconductors B U K455-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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Q03DLi40
K455-60A/B
T0220AB
BUK455
BUK455-60A
K455-60A
BUK455-60B
diode d2s
T0220AB
k455
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Untitled
Abstract: No abstract text available
Text: bRE D N AMER P H IL IP S /D IS C R E T E • bbS3R31 0Q3Qb65 D5T « A P X Product Specification Philips Semiconductors B U K456-200A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bbS3R31
0Q3Qb65
K456-200A/B
O220AB
BUK456
-200A
-200B
BUK456-200A/B
0030bAA
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BUK453-60A
Abstract: BUK453-60B T0220AB k453 K4536
Text: bTE D N AMER P H I L I P S / D I S C R E T E • b b S 3 T 31 0 G 3 DbDD 20 S Product Specification Philips Semiconductors BU K453-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.
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bbS3T31
K453-60A/B
T0220AB
BUK453
-ID/100
BUK453-60A
BUK453-60B
T0220AB
k453
K4536
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BUK455-100A
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK455-100A/B
BUK455
-100A
-100B
T0220AB
K455-100A/B
BUK455-100A
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BUK455
Abstract: BUK455-200A BUK455-200B T0220AB
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK455-200A/B
BUK455
-200A
-200B
T0220AB
T0220AB;
T0220
BUK455-200A
BUK455-200B
T0220AB
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727 Transistor power values
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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K456-1000B
T0220AB
BUK456-1000B
727 Transistor power values
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BUK456-800A/B
Abstract: BUK456 BUK456-800A BUK456-800B T0220AB
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK456-800A/B
BUK456
-800A
-800B
T0220AB
T0220AB;
T0220
BUK456-800A/B
BUK456-800A
BUK456-800B
T0220AB
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK453-100A/B
BUK453
-100A
-100B
T0220AB
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k452
Abstract: transistor k452 K4-521
Text: Product Specification Philips Sem iconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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K452-1OOA/B
BUK452
-100A
-100B
T0220AB
BUK452-100A/B
k452
transistor k452
K4-521
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D L.b53T31 003Db4S 473 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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b53T31
003Db4S
O220AB
K455-100A/B
BUK455
-100A
-100B
BUK455-100A/B
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k452
Abstract: BUK452-60A BUK452-60B T0220AB lo25 transistor k452
Text: N AMER PHILIPS/DISCRETE blE D • ^53^31 □□3GSTÜ Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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K452-60A/B
T0220AB
BUK452
-ID/100
k452
BUK452-60A
BUK452-60B
T0220AB
lo25
transistor k452
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diode t25 4 HO
Abstract: PO25C 415E BUK456 BUK456-200A BUK456-200B T0220AB
Text: PHILIPS INTERNATIONAL bSE D • 7110flEb OObHlEl 5*13 ■ P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device is Intended for use in
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7110flEb
BUK456-200A/B
BUK456
-200A
-200B
T0220AB
b4125
diode t25 4 HO
PO25C
415E
BUK456-200A
BUK456-200B
T0220AB
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Untitled
Abstract: No abstract text available
Text: bRE J> N AJ1ER PHILIPS/DISCRETE bbS3T31 DD3DS^S Dlfi * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bbS3T31
O220AB
BUK452-1OOA/B
BUK452
-100A
-100B
BUK452-100A/B
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/D ISCR ETE b'tE D bbS3^31 QQ30bRQ 417 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in
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QQ30bRQ
O220AB
BUK456-800A/B
BUK456
-800A
-800B
K456-800A
bbS3T31
0030b84
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TRANSISTOR b72
Abstract: BUK454-200A BUK454-200B T0220AB
Text: N AUER PHILIPS/DISCRETE b^E D m ^ 5 3 ^ 3 1 GDBDblS 73b • APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK454-200A/B
T0220AB
BUK454
-200A
-200B
TRANSISTOR b72
BUK454-200A
BUK454-200B
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k455
Abstract: BUK455 BUK455-200A BUK455-200B T0220AB
Text: bTE D N AMER PHI LIP S/ DI SC R ET E • 0D30b50 Ô3D H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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0D30b50
K455-200A/B
T0220AB
BUK455
-200A
-200B
-ID/100
k455
BUK455-200A
BUK455-200B
T0220AB
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BUK457-400A
Abstract: BUK457-400B T0220AB
Text: N AMER PHILIPS/D ISCR ETE SSE D • G020S4S T ■ PowerMOS transistor BUK457-400A BUK457-400B r-37-j 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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G020S4S
BUK457-400A
BUK457-400B
T-37-13
BUK457
-400A
-400B
BUK457-400A
BUK457-400B
T0220AB
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BUK454-600A
Abstract: bu 257 BUK454-600B T0220AB
Text: N AMER PHILIPS/DISCRETE 2SE t.bS3*131 Q G 2 Q 4 7 S D 4 PowerMOS transistor BUK454-600A BUK454-600B T -3 7 -/I GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUK454-600A
BUK454-600B
BUK454
-600A
-600B
bu 257
BUK454-600B
T0220AB
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BUK454-600A
Abstract: 1-fjv BUK454-600B T0220AB BUK454-600
Text: N AMER P H ILIP S /D IS C R E TE 2SE J> m t . bS3 * 13 1 QG2047S 4 • PowerMOS transistor BUK454-600A BUK454-600B r - 37-/1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK454-600A
BUK454-600B
BUK454
-600A
-600B
T-39-17
1-fjv
T0220AB
BUK454-600
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BUK454-500B
Abstract: BUK454-500A T0220AB K45450 tb 10 n 6
Text: bbSBTai QQ2DM7G SSE D N AMER P H I L I P S / D I S C R E T E S BUK454-500A BUK454-500B PowerMOS transistor N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK454-500A
BUK454-500B
BUK454
-500A
-500B
T-39-11
T0220AB
K45450
tb 10 n 6
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Diode LT 404
Abstract: 100-P BUK456 BUK456-100A BUK456-100B T0220AB
Text: N AMER P H IL IP S /D IS C R E T E h^E T> • bbSBTBl ODBDbûO P h ilip s S e m ico n d u cto rs PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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D030bfll
BUK456-100A/B
T0220AB
BUK456
-100A
-100B
/V-20/
Diode LT 404
100-P
BUK456-100A
BUK456-100B
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