BLY88C
Abstract: No abstract text available
Text: ^53*131 0 0 2 = ^ 2 SO? • APX BLY88U/01 b'lE » N AMER PHILIPS/DISCRETE J V V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is
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BLY88U/01
BLY88C
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BLY88
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'îE D • ^53^31 002=11^2 SO? ■ APX BLY88Ü/01 A V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is
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BLY88Ã
BLY88
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2N6107
Abstract: 2N6292
Text: 2N6107, 2N6292 f t 2N6107 2N6292 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR General Purpose Amplifier and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR r*-> CO V _ J DIM MIN MAX A 14.42 16.51 B 9.63 10.67
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2N6107,
2N6292
2N6107
2N6292
23833T4
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Untitled
Abstract: No abstract text available
Text: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband
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BFG135
OT223
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Untitled
Abstract: No abstract text available
Text: 2N6107, 2N6292 2N6107 2N6292 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR General Purpose Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4,83 0.90 1,15 1.40 3.75 3.88 2,29 2.79 2.54 3.43 0,56 12,70 14.73
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2N6107,
2N6292
2N6107
00010SÃ
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BLX14
Abstract: philips Fxc 3 b philips blx14 transistor EP 430 toroid LA Toroid International AB ES28 transistor application VCE28 neutralization push-pull
Text: m b5E D 711DöSb DQb3H50 430 • PHIN BLX14 PHILIPS INTERNATIONAL J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, A B and B operated transmitting equipment in the h.f. and v.h.f. band. • rated for 50 W P.E.P. at 1,6 M H z to 28 M H z
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BLX14
BLX14
philips Fxc 3 b
philips blx14
transistor EP 430
toroid LA
Toroid International AB
ES28
transistor application
VCE28
neutralization push-pull
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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BFP843
Abstract: No abstract text available
Text: BFP843 Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1.0, 2013-06-19 RF & Protection Devices Edition 2013-06-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
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BFP843
OT343
OT343-PO
OT343-FP
BFP843:
OT323-TP
BFP843
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Untitled
Abstract: No abstract text available
Text: BFP843F Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1.0, 2013-06-19 RF & Protection Devices Edition 2013-06-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
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BFP843F
BFP843F:
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL M05 TYPE L2- tt-MOSVI TPf«ift7 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive. Low Drain-Source ON Resistance : R d S (ON)= lOOmO (Typ.)
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TPC8302
----16V,
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Untitled
Abstract: No abstract text available
Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25J6ES40 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.35ns Max. (Ic = 25A) • Low saturation voltage:
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MG25J6ES40
TCn72SQ
002ni3
PW03050796
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Untitled
Abstract: No abstract text available
Text: International PD - 9.1131A Rectifier IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC20M-S
10kHz)
4AS54S2
SMD-220
C-340
MA55452
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3.5b zener diode
Abstract: diode so3 NDB6050L NDP6050L
Text: National April 1996 S e m i c o n d u c t o r " N D P 6050L/ NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using
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NDP6050L/
NDB6050L
ne8-59
00402bE
bSD1130
D0M02b3
3.5b zener diode
diode so3
NDB6050L
NDP6050L
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TRANSISTOR SMD MARKING CODE 7A
Abstract: No abstract text available
Text: BSP 296 I nf ineon technologies SIPMOS 9 Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Type '/ DS BSP 296 100 V Type BSP 296 Ordering Code Q67000-S067 1A Pin 2 WDS(on) Package Marking 0.8 Q SOT-223
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Q67000-S067
OT-223
E6327
Values100
S35bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
TRANSISTOR SMD MARKING CODE 7A
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2SK1471
Abstract: 2SK2153 2SK1474 2SB1205 160i FX209 2SJ188 2SJ336 2SK1468 CI 7001
Text: SAUYO New Products Of New Package 5/6-pin XP Series FX type The Sanyo new package 5/6-pin XPs are intermediate sized devices between Sanyo PCP and TP packages and have high power capability. This package line includes large current switching transistor series, power MOS FET series, and other device series.
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900mm2XO
SB07-03P
2SK1467
SB05-05P
f-10pF
2SJ190
SB05-09
2SK1470
2SK1471
2SK2153
2SK1474
2SB1205
160i
FX209
2SJ188
2SJ336
2SK1468
CI 7001
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2SB630
Abstract: 2SB710 2SB628 2SB631 2SB632 2SB709 2SD597 63A50
Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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Tc-25
2SB630
2SB710
2SB628
2SB631
2SB632
2SB709
2SD597
63A50
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Untitled
Abstract: No abstract text available
Text: fZ T ^ 7# S G S -T H O M S O N DälD e^ ElLllOT@IDei S TB 6 N A 60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V STB6NA60 d ss 600 V R d Id S (o d < 1 . 2 6.5 A • . . . . . . . TYPICAL RDS(on) *= 1 £2 ± 30V GATE TO SOURCE VOLTAGE RATING
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STB6NA60
O-262)
O-263)
O-262
O-263
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UPC1342V
Abstract: UPC1342 transistor C 2987A transistor 2sc 4267 C1342V 40WTHD 2SD2013 PC1342V 2SC2987 C2987
Text: N E C 6427525 N E C ELECTRONICS INC DSE D | t,427S25 GG230t,4 7 | ~ E LE CTRON IC S INC 05E 23064 D BIPOLAR ANALOG INTEGRATED CIRCUIT MP C I 3 4 2 V 7~z-7 t/t2S'-C>/ 5 0 to 1 1 0 W POWER A M P LIFIE R DRIVER DESCRIPTION ¿¿PC1342V is a integrated monolithic circuit designed for 50 W to 110 W class HiFi audio power amplifier and consists of
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427S25
GG230t
uPC1342V
D53D75
UPC1342
transistor C 2987A
transistor 2sc 4267
C1342V
40WTHD
2SD2013
PC1342V
2SC2987
C2987
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PDF
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buw41
Abstract: BUW41B BUW41A CA3725 2CB32
Text: BUW41, BUW41A, BUW41B H A RR IS SEMICON] SE CT OR File Number SbE D 1275 43 02 271 Ü D 4 G 7 1 3 T2S H H A S 5-A Sw itchM aX Power T ransistors T- Ie } TERMINAL DESIGNATIONS High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications
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BUW41,
BUW41A,
BUW41B
O-22QAB
BUW41B
CA3725
buw41
BUW41A
2CB32
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VTT1112
Abstract: transistor T2S DDD11 VTT1113 VTT1114 0 205 001 040 transistor c 4161
Text: SbE 3030bCH D DDD11Ö3 .050" NPN Phototransistors VCT V T T 1 1 1 2 , 13, 14 TO-46 Lensed Package E G & G T2S T-41-61 VACTEC PAC KAG E DIMENSIONS inch mm CASE 3 T0-4G HERMETIC (LENSED) CHIP TYPE: 50T PRO D UCT DESCRIPTION AB SO LU T E MAXIMUM RATINGS (@ 25°C u n le s s otherw ise noted)
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3030bCH
DDD11Ã
VTT1112,
T-41-61
VTT1112
VTT1113
VTT1114
transistor T2S
DDD11
0 205 001 040
transistor c 4161
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PDF
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Vactec
Abstract: DDD11 VTT1112 VTT1113 VTT1114
Text: SbE 3030bCH D DDD11Ö3 .050" NPN Phototransistors VCT V T T 1 1 1 2 , 13, 14 TO-46 Lensed Package E G & G T2S T-41-61 VACTEC PAC KAG E DIMENSIONS inch mm CASE 3 T0-4G HERMETIC (LENSED) CHIP TYPE: 50T PRO D UCT DESCRIPTION AB SO LU T E MAXIMUM RATINGS (@ 25°C u n le s s otherw ise noted)
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3030bCH
DDD11Ã
VTT1112,
T-41-61
VTT1112
VTT1113
VTT1114
Vactec
DDD11
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PDF
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transistor T2S
Abstract: Widlar
Text: LM1014 y% \ National \C A Sem iconductor LM1014 Motor Speed Regulator General Description The LM1014 is a monolithic integrated circuit specifically resigned to provide a low cost motor speed regulator for low voltage DC motors. Features • ■ ■ ■ ■
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LM1014
LM1014
transistor T2S
Widlar
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OMRON E5CN
Abstract: omron zen 10c1dr-d-v1 Omron SPEED sensor 12v m16 OMRON H5CX programming manual omron zen 10c1ar-a-v1 omron TS 101 DA analogue extension modules ZEN 10C1DR-D-V1 sv 120 230 liquids dual level relay manual omron e5cs Omron H7CR Catalog
Text: INDUSTRIAL COMPONENTS Product Selector 2004 / 2005 • Electromechanical relays • Timers • Counters • Programmable relays • Level and leakage controllers • Industrial switches • Pushbutton switches • Low voltage switch gear • Temperature controllers
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mW
2SC4627
2SC5021
2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
D2375
D1259A
d1267a
D1265A
transistor 2SA1949
2sd2328a
TRANSISTORS SELECTION GUIDE
D1261A
C3795
2SB1526
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