K2717
Abstract: transistor k2717
Text: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2717 DC−DC Converter and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.4 S (typ.)
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2SK2717
K2717
transistor k2717
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2SK41
Abstract: k4114
Text: 2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK4114 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)
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2SK4114
2SK41
k4114
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Untitled
Abstract: No abstract text available
Text: TK6B60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6B60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.)
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TK6B60D
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TPC8404
Abstract: No abstract text available
Text: TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel π-MOSV/N Channel π-MOSV TPC8404 Motor Dreive Switching Regulator Applications • • Unit: mm Low drain-source ON resistance: P Channel RDS (ON) = 1.85 Ω (typ.) N Channel RDS (ON) = 1.2 Ω (typ.)
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TPC8404
-250V)
TPC8404
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Untitled
Abstract: No abstract text available
Text: TK15H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI TK15H50C ○ Switching Regulator Applications • Unit: mm Low drain−source ON resistance : RDS (ON) = 0. 33 Ω (typ.) : |Yfs| = 8.5 S (typ.) • High forward transfer admittance
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TK15H50C
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Untitled
Abstract: No abstract text available
Text: TK8A25DA MOSFETs Silicon N-Channel MOS π-MOS TK8A25DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
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TK8A25DA
O-220SIS
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k4a60db
Abstract: K4A60 K4A60D
Text: TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)
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TK4A60DB
k4a60db
K4A60
K4A60D
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k14a55
Abstract: K14A55D TK14A55D transistor K14A55D
Text: TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK14A55D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.)
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TK14A55D
k14a55
K14A55D
TK14A55D
transistor K14A55D
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2SK4105
Abstract: K4105 2SK41 K-410
Text: 2SK4105 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK4105 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)
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2SK4105
SC-67
2-10R1B
2SK4105
K4105
2SK41
K-410
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tk12a65d
Abstract: tk12a65
Text: TK12A65D MOSFETs Silicon N-Channel MOS π-MOS TK12A65D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 6.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)
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TK12A65D
O-220SIS
tk12a65d
tk12a65
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Untitled
Abstract: No abstract text available
Text: SSM6P16FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSVI SSM6P16FE High Speed Switching Applications Analog Switch Applications • Small package Low on-resistance Unit: mm : RDS(ON) 8 (max) (@VGS 4 V) : RDS(ON) 12 (max) (@VGS 2.5 V)
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SSM6P16FE
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Untitled
Abstract: No abstract text available
Text: TK13H90A1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type MACHⅡ π-MOSIV TK13H90A1 Swiching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.78 Ω (typ.) z High forward transfer admittance : |Yfs| = 11 S (typ.)
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TK13H90A1
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Untitled
Abstract: No abstract text available
Text: TK4P60DA MOSFETs Silicon N-Channel MOS π-MOS TK4P60DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.7 Ω (typ.) (VGS = 10 V) (2) High forward transfer admittance: |Yfs| = 2.2 S (typ.) (3)
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TK4P60DA
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Untitled
Abstract: No abstract text available
Text: TK16H60C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI TK16H60C Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0. 32 Ω (typ.) z High forward transfer admittance : |Yfs| = 11 S (typ.) z Low leakage current
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TK16H60C
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Untitled
Abstract: No abstract text available
Text: ISSI IS62WV51216ALL, IS62WV51216BLL Mini Ball Grid Array Package Code: B 48-pin Top View Bottom View φ b (48x) 1 2 3 4 5 6 6 A 4 3 2 1 A e B B C C D D D 5 D1 E E F F G G H H e E E1 A2 A A1 SEATING PLANE Notes: 1. Controlling dimensions are in millimeters.
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IS62WV51216ALL,
IS62WV51216BLL
48-pin)
25BSC
75BSC
207BSC
148BSC
030BSC
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MPR-20 103
Abstract: mpr-20 200 MPR-20 201
Text: 3368S Series Single Color φ3 Round Shape Type Features φ3 Round shape type, Package EMBG/MBG,EMPG/MPG : Pale Green Clear epoxy EMPY/MPY,EMAY/MAY : Pale Yellow Clear epoxy EMAA/MAA : Pale Orange Clear epoxy EMVR/MVR,EBR/BR,MPR : Pale Red Clear epoxy Product features
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3368S
558nm
567nm
572nm
590nm
606nm
624nm
647nm
630nm
MPR-20 103
mpr-20 200
MPR-20 201
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VRBG5614S
Abstract: VRBG5614 5614S
Text: 5614S Series Bi-color φ5 Round Shape Type Features Bi-color φ5 Round shape type, Milky White Diffused epoxy Package Product features ・Outer Dimension φ5 Round shape type ・Operation temperature range. Storage Temperature :-30℃～100℃ Operating Temperature
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5614S
558nm
567nm
572nm
624nm
200pcs
VRBG5614S
VRBG5614
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Untitled
Abstract: No abstract text available
Text: CONVENTIONAL LED LAMPS Standard Type φ3.2 Circular Type LED Lamps SLR-332 Series Yellow Green Emitting Surface Dimension mm Shape GaP Red GaAsP on GaP 563nm Circular Type Orange 610nm 585nm 650nm φ3.2 SLR-332MC SLR-332MG SLR-332YC SLR-332YY SLR-332DC SLR-332DU SLR-332VC SLR-332VR
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SLR-332
563nm
610nm
585nm
650nm
SLR-332MC
SLR-332MG
SLR-332YC
SLR-332YY
SLR-332DC
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LA-101VA
Abstract: No abstract text available
Text: LA-101AK Series LED displays High efficiency, single-digit numeric displays LA-101AK Series !External Dimensions Units: mm 24.0±0.2 10˚ 2.5 14.1 (30.5) 10.5±0.2 φ3.2 φ0.5 (2.54) (10.16) 3.5Min. !Features 1) Height of character: 25.4 mm 2) Dimensions: 24 x 34 x 10.5 mm
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LA-101AK
LA-101VA
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Untitled
Abstract: No abstract text available
Text: BC Series 1.5 to 3 Watt Isolated DC-DC Converter Single / Dual Regulated Output 1. Features : n 24 Pin DIL Package n Regulated Output & Low Ripple and Noise n Input / Output Isolation 1K Vdc 3K Vdc n 100 % Burn-In n Input π- Filter n Custom Design Available
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tem86-3-2122268
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Untitled
Abstract: No abstract text available
Text: Semiconductor SR5312-U / SR5312-U B High Brightness LED Lamp Features • Colorless transparency lens type • φ5mm(T-1¾) all plastic mold type • Ultra luminosity Application • Message panels • Backlighting • Indicator lamp Outline Dimensions STRAIGHT TYPE
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SR5312-U
KLR-9014-001
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262LY-682K
Abstract: toko 8rbs
Text: Radial Type Fixed Inductors 径向引线式固定电感器 8RBS Inductance Range/电感值范围:0.1~15mH φ8.3Max. 2.3 5.0 6.2Max. φ0.7 Unit: mm （单位：毫米） FEATURES 特点 • Ideal as a choke or a trap coil for low profile equipment. Entire winding core is encapsulated in heat shrunk plastic
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262LY-101K
262LY-121K
262LY-151K
262LY-181K
262LY-221K
262LY-271K
262LY-331K
262LY-391K
262LY-471K
262LY-561K
262LY-682K
toko 8rbs
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k3564
Abstract: transistor K3564 K356 2SK35
Text: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.)
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2SK3564
k3564
transistor K3564
K356
2SK35
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Untitled
Abstract: No abstract text available
Text: RF101A2S Diodes Fast recovery diode RF101A2S zApplications General rectification zDimensions Unit : mm CATHODE BAND (BLUE) 4 φ0.6±0.1 ① ② zFeatures 1) Cylindrical mold type. (MSR) 2) Ultra Low VF. 3) Ultra high switching. 4) Low switching loss. 5) High ESD.
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RF101A2S
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