1MX4 DRAM SIMM Search Results

1MX4 DRAM SIMM Result Highlights (4)

Part	Manufacturer	Description
TMS4030JL	Rochester Electronics LLC	TMS4030JL - TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22
4164-15FGS/BZA	Rochester Electronics LLC	4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA)
4164-12JDS/BEA	Rochester Electronics LLC	4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA)
4164-15JDS/BEA	Rochester Electronics LLC	4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA)

1MX4 DRAM SIMM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Preliminary DRAM MODULE_ KMM5362203BW/BWG KMM5362203BW/BWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2M bit x 36 Dynamic RAM high density memory module. The	OCR Scan	KMM5362203BW/BWG KMM5362203BW/BWG 2Mx36 1Mx16 KMM5362203BW 42-pin 24-pin 72-pin	PDF
tb41 Abstract: No abstract text available Text: DRAM MODULE KMM5362203AW/AWG KMM5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203AW is a 2M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The	OCR Scan	KMM5362203AW/AWG KMM5362203AW/AWG 2Mx36 1Mx16 KMM5362203AW KMM5362203AW cycles/16 5362203AW tb41	PDF
ODQ35 Abstract: KM44C1003CJ Text: Preliminary KMM5362203BW/BWG DRAM MODULE KMM5362203BW/BWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362203BW consists of four CMOS	OCR Scan	KMM5362203BW/BWG KMM5362203BW/BWG 2Mx36 1Mx16 KMM5362203BW 42-pin 24-pin 72-pin ODQ35 KM44C1003CJ	PDF
1Mx4 Abstract: No abstract text available Text: DRAM MODULE 4 Mega Byte KMM5361203W/WG Fast Page Mode 1Mx36 DRAM SIMM , 1K Refresh, 5V Using 1Mx16 B/W DRAM and 1Mx4 Quad CAS DRAM GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5361203W is a 1M bit x 32 Dynamic RAM high density memory module The	OCR Scan	KMM5361203W/WG 1Mx36 1Mx16 KMM5361203W 42-pin 24-pin 72-pin 1Mx4	PDF
KM416C1200AJ Abstract: km44c1003cj kmm5361203aw Text: DRAM MODULE 4 Mega Byte KMM5361203AW/AWG Fast Page Mode 1Mx36 DRAM SIMM , 1K Refresh, 5V Using 1Mx16 B/W DRAM and 1Mx4 Quad CAS DRAM GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5361203AW is a 1M bit x 36 Dynamic RAM high density memory module. The	OCR Scan	KMM5361203AW/AWG 1Mx36 1Mx16 KMM5361203AW 42-pin 24-pin 72-pin KM416C1200AJ km44c1003cj	PDF
we 510 Abstract: UG9M Text: UG9M13621DBG T 4M Bytes (1M x 36 ) DRAM w/Parity 72Pin SIMM based on 1M X 4 General Description Features The UG9M13621DBG(T) is a 1,048,576 bits by 36 SIMM module.The UG9M13621DBG(T) is assembled using 8 pcs of 1Mx4 1K refresh in 300mil package, and 1 pc of 1Mx4 Quad-CAS	Original	UG9M13621DBG 72Pin 300mil 1000mil) we 510 UG9M	PDF
Untitled Abstract: No abstract text available Text: UG18M23601DBG T 8M Bytes (2M x 36) DRAM 72Pin SIMM w/Parity based on 1M X 4 General Description Features The UG18M23601DBG(T) is a 2,097,152 bits by 36 SIMM module.The UG18M23601DBG(T) is assembled using 16 pcs of 1Mx4 1K refresh DRAMs 2 pcs of 1Mx4 Quad-CAS DRAMs mounted	Original	UG18M23601DBG 72Pin 1000mil) UG18M23621DBG	PDF
km44c1003cj Abstract: No abstract text available Text: Preliminary KMM5361203BW/BWG DRAM MODULE KMM5361203BW/BWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN E R A L D ESCRIPTIO N The Samsung KMM5361203BW is a 1M bit x 36 Dynamic RAM high density memory module. The FEATURES	OCR Scan	KMM5361203BW/BWG KMM5361203BW/BWG 1Mx36 1Mx16 KMM5361203BW 42-pin 24-pin 72-pin km44c1003cj	PDF
km44c1003cj Abstract: No abstract text available Text: DRAM MODULE KMM5361203AW/AWG KMM5361203AW/AWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM5361203AW is a 1M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5361203AW consists of two CMOS	OCR Scan	KMM5361203AW/AWG KMM5361203AW/AWG 1Mx36 1Mx16 KMM5361203AW 42-pin 24-pin 72-pin KMM5361233AW km44c1003cj	PDF
1Mx4 dram simm Abstract: UG9M Text: UG9M13601DBG T 4M Bytes (1M x 36) DRAM w/Parity 72Pin SIMM based on 1M X 4 General Description Features The UG9M13601DBG(T) is a 1,048,576 bits by 36 SIMM module.The UG9M13601DBG(T) is assembled using 8 pcs of 1Mx4 1K refresh in 300mil package, and 1 pc of 1Mx4 Quad-CAS	Original	UG9M13601DBG 72Pin 300mil 1000mil) 1Mx4 dram simm UG9M	PDF
Untitled Abstract: No abstract text available Text: Preliminary KMM5361203BW/BWG DRAM MODULE KMM5361203BW/BWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Sam sung KM M 5361203BW is a 1M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The	OCR Scan	KMM5361203BW/BWG KMM5361203BW/BWG 1Mx36 1Mx16 5361203BW KMM5361203BW cycles/16m KMM5361203BW	PDF
Untitled Abstract: No abstract text available Text: UG18M23621DBG T 8M Bytes (2M x 36) DRAM 72Pin SIMM w/Parity based on 1M X 4 General Description Features The UG18M23621DBG(T) is a 2,097,152 bits by 36 SIMM module.The UG18M23621DBG(T) is assembled using 16 pcs of 1Mx4 1K refresh DRAMs 2 pcs of 1Mx4 Quad-Cas DRAMs mounted	Original	UG18M23621DBG 72Pin 1000mil)	PDF
KMM5362203AW-6 Abstract: kmm5362203aw Text: DRAM MODULE 8 Mega Byte KMM5362203AW/AWG Fast Page Mode 7 2Mx36 DRAM SIMM , 1K Refresh, 5V Using 1 Mx16 B/W DRAM and 1Mx4 Quad CAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203AW is a 2M bit x 36 Dynamic RAM high density memory module. The • Performance Range:	OCR Scan	KMM5362203AW/AWG 2Mx36 KMM5362203AW 1Mx16 42-pin 24-pin 72-pin KMM5362203AW-6	PDF
KMM5361000 Abstract: "soj 26" dram 80 ns G392 Text: KMM536100QA/AG/A1 /A1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361 OOOA is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KMM5361 OOOA consist of eight CMOS 1MX4 bit	OCR Scan	KMM536100QA/AG/A1 KMM5361 bitsX36 20-pin 72-pin KMM5361000 "soj 26" dram 80 ns G392	PDF

KM48C2100AJ Abstract: No abstract text available Text: DRAM MODULE y 8 Mega Byte KMM5362209AU/AUG Fast Page Mode 2Mx36 DRAM SIMM , 1K Refresh, 5V Using 2Mx8 B/W DRAM and 1Mx4 Quad CAS DRAM with AND Gate GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung K M M 5362209AU is a 2M bit x 36 Dynam ic RAM high de nsity m em ory module. The	OCR Scan	KMM5362209AU/AUG 2Mx36 5362209AU 362209A 24-pin 16-pin 72-pin KM48C2100AJ, KM44C1003CJ KM48C2100AJ	PDF
Untitled Abstract: No abstract text available Text: DRAM MODULE KMM5362203BW/BWG KMM5362203BW/BWG with Fast Page Mode 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2Mx36bits Dynamic RAM high density memory module. The Samsung KMM5362203BW consists of four CMOS 1Mx16bits DRAMs	OCR Scan	KMM5362203BW/BWG KMM5362203BW/BWG 1Mx16 KMM5362203BW 2Mx36bits 1Mx16bits 42-pin 24-pin 72-pin	PDF
KM416C1200AJ Abstract: No abstract text available Text: DRAM MODULE KM M5362203AW/AWG KM M5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN ERA L D ESC RIPTIO N FEATURES The Sam sung KMM5362203AW is a 2M bit x 36 Dynam ic RAM high density m em ory module. The Samsung KM M 5362203AW consists of four CMOS	OCR Scan	M5362203AW/AWG M5362203AW/AWG 2Mx36 1Mx16 KMM5362203AW 5362203AW 24-pin 72-pin 362203A KMM5362203AW KM416C1200AJ	PDF
km44c1000aj Abstract: 581000A Text: KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581OOOAN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581 OOOAN consist of two 4M bit DRAMs KM44C1000AJ - 1MX4 in 20-pin SOJ package	OCR Scan	KMM581000AN 130ns 150ns 180ns KMM581 30-pin KMM581OOOAN KM44C1000AJ 20-pin 581000A	PDF
KMM5322000-10 Abstract: KMM5322000 Text: KMM532200QAV/AVG DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM532200QAV is a 2M bitsx32 Dynamic RAM high, density memory module. The Samsung KMM5322000AV consist of sixteen CMOS 1Mx4 bit DRAMs in 20-pin SOJ package mounted on a 72-pin	OCR Scan	KMM532200QAV/AVG KMM5322000AV- KMM5322000AV-10 130ns 150ns 180ns KMM532200QAV bitsx32 KMM5322000AV KMM5322000-10 KMM5322000	PDF
Untitled Abstract: No abstract text available Text: KMM5321000AV/AVG DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5321000AV is a 1M bitsx32 Dynamic RAM high density memory module. The Samsung KMM5321000AV consist of eight CMOS 1Mx4 bit DRAMs in 20-pin SOJ package mounted on a 72-pin	OCR Scan	KMM5321000AV/AVG 1Mx32 KMM5321000AV- KMM5321000AV-10 100ns 130ns 150ns 180ns KMM5321000AV	PDF
taa 440 Abstract: No abstract text available Text: SMART SM5320140U1XUUU Modular Technologies November 19, 1996 4MByte 1M x 32 DRAM Module - 1Mx4 based 72-pin SIMM Features Part Numbers • • • • • • • • • • • SM532014001XUUU SM532014011XUUU SM532014081XUUU SM532014091XUUU Standard	Original	SM5320140U1XUUU 72-pin SM532014001XUUU SM532014011XUUU SM532014081XUUU SM532014091XUUU 60/70/80ns 300mil AMP-7-382486-2 AMP-822019-4 taa 440	PDF
Untitled Abstract: No abstract text available Text: SMART SM5360140U1EUUU Modular Technologies November 12, 1996 4MByte 1M x 36 DRAM Module - 1Mx4 based 72-pin SIMM, ECC Features Part Numbers • • • • • • • • • • • SM536014001EUUU SM536014011EUUU SM536014081EUUU SM536014091EUUU Standard	Original	SM5360140U1EUUU 72-pin 60/70/80ns 300mil SM536014001EUUU SM536014011EUUU SM536014081EUUU SM536014091EUUU	PDF
UG6M23621PBG Abstract: edo dram 50ns 72-pin simm DQ18-DQ25 Text: • UG6M23621PBG T 8M Bytes (2M x 36 ) DRAM 72Pin SIMM w/Parity based on 1M X 16 General Description Features The UG6M23621PBG(T) is a 2,097,152 bits by 36 SIMM module.The UG6M23621PBG(T) is assembled using 4 pcs of 1Mx16 1K refresh and 2 pcs of 1Mx4 Quad CAS DRAM SOJ package,	Original	UG6M23621PBG 72Pin 1Mx16 1000mil) edo dram 50ns 72-pin simm DQ18-DQ25	PDF
DS469 Abstract: TAA 762 72 simm function Text: 2M x 36 Bit 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 362006-S51m06JG 72 Pin 2Mx36 FPM SIMM Unbuffered, 1k Refresh, 5V Pin Assignment General Description The module is a 2Mx36 bit, 6 chip, 5V, 72 Pin SIMM module consisting of (4) 1Mx16 (SOJ) DRAM (2) 1Mx4 QUAD CAS DRAMs.	Original	362006-S51m06JG 2Mx36 1Mx16 72-pin 1Mx16 1024-cycle DS469-05f DS469 TAA 762 72 simm function	PDF

1MX4 DRAM SIMM Search Results

1MX4 DRAM SIMM Result Highlights (4)

1MX4 DRAM SIMM Datasheets Context Search

Untitled

tb41

ODQ35

1Mx4

KM416C1200AJ

we 510

Untitled

km44c1003cj

km44c1003cj

1Mx4 dram simm

Untitled

Untitled

KMM5362203AW-6

KMM5361000

KM48C2100AJ

Untitled

KM416C1200AJ

km44c1000aj

KMM5322000-10

Untitled

taa 440

Untitled

UG6M23621PBG

DS469