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    1N5443A Search Results

    1N5443A Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N5443A Knox Semiconductor GENERAL PURPOSE ABRUPT VARACTOR DIODE Original PDF
    1N5443A Codi Semiconductor Voltage-Variable Capacitance (Tuning) Diodes Scan PDF
    1N5443A Codi Semiconductor JEDEC Registered Voltage Variable Capacitor, DO-7 Scan PDF
    1N5443A International Semiconductor High Q - Voltage Variable Capacitors Scan PDF
    1N5443A Loral JEDEC Tuning Varactors, DO-7 Glass Package Scan PDF
    1N5443A Motorola The European Selection Data Book 1976 Scan PDF
    1N5443A Motorola European Master Selection Guide 1986 Scan PDF
    1N5443A MSI Electronics Abrupt / Hyperabrupt Glass Packaged Tuning Diodes Scan PDF
    1N5443A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N5443A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N5443A Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N5443A Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N5443A Unknown Catalog Scans - Shortform Datasheet Scan PDF
    1N5443A Teledyne Components High Q Silicon Varactron Voltage Variable Capacitance Diodes Scan PDF
    1N5443A Thomson-CSF Condensed Data Book 1977 Scan PDF
    1N5443A06 Alpha Industries 30V Vrrm, 10pF Capacitance Varactor Diode Scan PDF
    1N5443A12 Alpha Industries 30V Vrrm, 10pF Capacitance Varactor Diode Scan PDF
    1N5443A18 Alpha Industries 30V Vrrm, 10pF Capacitance Varactor Diode Scan PDF
    1N5443ACHIP MSI Electronics 30V Vrrm, 10pF Capacitance Varactor Diode Scan PDF

    1N5443A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MSC2404

    Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage


    Original     		PDF MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72

    BF245

    Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30


    Original     		PDF MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568

    stencil

    Abstract: BC237 automatic heat detector project report BC393 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and


    Original     		PDF BAT54T1 Ju218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 stencil BC237 automatic heat detector project report BC393 equivalent

    BC237

    Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


    Original     		PDF SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1

    bs170 replacement

    Abstract: BC237 BC30 transistor K 2056
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)


    Original     		PDF BS170 226AA) DS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 bs170 replacement BC237 BC30 transistor K 2056

    transistor bc237 bc337

    Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage


    Original     		PDF BC337 BC338 226AA) Junction218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor bc237 bc337 replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT

    BC237

    Abstract: MPS-A70 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage


    Original     		PDF MPSA70 226AA) CHARACTERI218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 MPS-A70 equivalent

    bc182 equivalent 2n2907

    Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO


    Original     		PDF BC182 BC183 BC184 BC184 226AA) Junction218A MSC1621T1 MSC2404 bc182 equivalent 2n2907 bc183 equivalent BC237 BF245 bc184 equivalent

    transistor MPS5771

    Abstract: BC237 bfw4
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit


    Original     		PDF MMBD914LT1 236AB) DE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 transistor MPS5771 BC237 bfw4

    P2d MARKING CODE

    Abstract: H2A transistor ev 2816 BC237 transistor 2N2906
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage


    Original     		PDF PZTA92T1 261AA ELECTRI218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 P2d MARKING CODE H2A transistor ev 2816 BC237 transistor 2N2906

    WT transistor

    Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc


    Original     		PDF MMBF5484LT1 236AB) C218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 WT transistor BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA

    2N5457 MOTOROLA

    Abstract: 2N5457 equivalent BC237 transistor 2N5457
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc


    Original     		PDF 2N5457 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N5457 MOTOROLA 2N5457 equivalent BC237 transistor 2N5457

    BC237

    Abstract: jedec package TO-226AA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 ANODE 1 Motorola Preferred Device CATHODE 2 3 CATHODE/ANODE 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage


    Original     		PDF BAV99LT1 236AB) J218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 jedec package TO-226AA

    2n1613 equivalent

    Abstract: BC237 diode l 0607
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection


    Original     		PDF SC-70/SOT-323 BAV99WT1 BAV99LT1. BAV99RWT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2n1613 equivalent BC237 diode l 0607

    2N5458

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.


    Original     		PDF M1MA151/2KT1 inch/3000 M1MA151/2KT3 inch/10 M1MA151KT1 M1MA152KT1 M1MA152KT1 Volta218A MSC1621T1 2N5458 BC237

    2N16

    Abstract: BC237 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72

    BC237

    Abstract: MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBD54DWT1 Preliminary Information Dual Schottky Barrier Diodes Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces


    Original     		PDF MBD54DWT1 Reve218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1

    bc327 replacement

    Abstract: equivalent components for transistor bc328 BC237 bf391 t Motorola MVAM125 bc327 equivalent SOT23 BC327-25
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors PNP Silicon BC327,-16,-25 BC328,-16,-25 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC327 BC328 Unit Collector – Emitter Voltage VCEO –45 –25 Vdc Collector – Base Voltage


    Original     		PDF BC327 BC328 BC327 BC328 226AA) t218A MSC1621T1 MSC2404 MSD1819A MV1620 bc327 replacement equivalent components for transistor bc328 BC237 bf391 t Motorola MVAM125 bc327 equivalent SOT23 BC327-25

    Transistor BC107 motorola

    Abstract: transistor motorola 2n3053 transistor BF245 BC237 2N2369 transistor pulse generator Gate Driver SOT-363 Marking Code G Transistor BC107b motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Core Driver Transistor MPQ3725 NPN Silicon 14 13 12 11 10 9 8 5 6 7 Motorola Preferred Device NPN 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Emitter Voltage


    Original     		PDF MPQ3725 Tran218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 Transistor BC107 motorola transistor motorola 2n3053 transistor BF245 BC237 2N2369 transistor pulse generator Gate Driver SOT-363 Marking Code G Transistor BC107b motorola

    BC237

    Abstract: BC109C
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Switching Transistor MPQ3904 NPN Silicon Motorola Preferred Device 14 13 12 11 10 9 8 5 6 7 NPN 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage


    Original     		PDF MPQ3904 R218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 BC109C

    Untitled

    Abstract: No abstract text available
    Text: MSI ELECTRONICS INC 3SE £ E3 5b5bMbb 000036b T E M S I T - 0 7 -/7 - HERMETICALLY SEALED GL AS S PACKAGED TUNING DIODES 08 D S D elect ABRUPT - HYPERABRU PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted GENERAL APPLICATIONS


    OCR Scan     		PDF 000036b C2/C20 G702A SQ1214A G603A SQ1714 SQ1715 SQ1216A C20/pf

    MV2215

    Abstract: MV2112 MV2201 mv838 MV2213 mv2114 1N5441A 1N5443A 1N5444A MV1620
    Text: RF — SIGNAL PROCESSING DIODES continued General-Purpose Tuning Diodes (continued) MAXIMUM WORKING VOLTAGE s ^ ' 30 V O U S CASE 51 DO-204AA (DO-7) Ct Nominal Capacitance PF ±10% («' V r = 4.0 V f = 1.0 MHz - .Cap.''"'' Ratio 4 -2 5 V Mtn Cap . . Ratso


    OCR Scan     		PDF DO-204AA 1N5441A MV1620 1N5442A MV1622 1N5443A MV1624 1N5444A MV1626 1N5445A MV2215 MV2112 MV2201 mv838 MV2213 mv2114 1N5441A 1N5443A 1N5444A MV1620

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    A-29 diode

    Abstract: Voltage Variable Capacitance Diodes 1N5450A 1N5470A 1N5472A MV1650 N5447A 1N5441A 1N5140 1N5141
    Text: 6367255 MOTOROLA SC P I O D E S /O P T O ÖT 89D 77450 DE |h3t,7SSS □077'4SD fi *T " 0 7 ~ /? General Purpose Abrupt Junction Tuning Diodes Voltage variable capacitance diodes for electronic tuning and control of RF circuits through UHF frequencies. Utilized


    OCR Scan     		PDF DO-204AA) C4/C60 C2/C30 1N5139 1N5461A 1N5462A 1N5140 1N5463A 1N5442A MV1622 A-29 diode Voltage Variable Capacitance Diodes 1N5450A 1N5470A 1N5472A MV1650 N5447A 1N5441A 1N5141