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    2SA1730

    Abstract: EN3134
    Text: Ordering number:EN3134 PNP Epitaxial Planar Silicon Transistor 2SA1730 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET , MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed.


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    PDF EN3134 2SA1730 2SA1730] 2SA1730 EN3134

    2044B

    Abstract: 2SA1731 ITR04425
    Text: Ordering number:ENN3135A PNP Epitaxial Planar Silicon Transistor 2SA1731 High-Speed Switching Applications Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.


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    PDF ENN3135A 2SA1731 2045B 2SA1731] 2044B 2044B 2SA1731 ITR04425

    2SA1730

    Abstract: ITR04415 ITR04416 ITR04418
    Text: Ordering number:ENN3134 PNP Epitaxial Planar Silicon Transistor 2SA1730 High-Speed Switching Applications Features Package Dimensions unit:mm 2038A [2SA1730] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET , MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage.


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    PDF ENN3134 2SA1730 2SA1730] 25max 2SA1730 ITR04415 ITR04416 ITR04418

    2SA1730

    Abstract: No abstract text available
    Text: 2SA1730 Ordering number : EN3134A SANYO Semiconductors DATA SHEET 2SA1730 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.


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    PDF 2SA1730 EN3134A 2SA1730

    2SC4002

    Abstract: ITR06235 ITR06236
    Text: 2SC4002 Ordering number : ENN2960A NPN Triple Diffused Planar Silicon Transistor 2SC4002 High-Voltage Driver Applications Features • • • High breakdown voltage. Adoption of MBIT process. Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C


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    PDF 2SC4002 ENN2960A 2SC4002 ITR06235 ITR06236

    2044B

    Abstract: 2SC4003
    Text: Ordering number:EN2959A NPN Triple Diffused Planar Silicon Transistor 2SC4003 High-Voltage Driver Applications Features • High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. Package Dimensions unit:mm 2045B [2SC4003] 1 : Base


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    PDF EN2959A 2SC4003 2045B 2SC4003] 2044B 2044B 2SC4003

    2SC4002

    Abstract: No abstract text available
    Text: Ordering number:EN2960 NPN Triple Diffused Planar Silicon Transistor 2SC4002 High-Voltage Driver Applications Features Package Dimensions • High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. unit:mm 2003B [2SC4002] 5.0 4.0 5.0


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    PDF EN2960 2SC4002 2003B 2SC4002] SC-43 2SC4002

    c 3135-3

    Abstract: 2044B 2SA1731
    Text: Ordering number:EN3135A PNP Epitaxial Planar Silicon Transistor 2SA1731 High-Speed Switching Applications Features • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions


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    PDF EN3135A 2SA1731 2045B 2SA1731] 2044B c 3135-3 2044B 2SA1731

    2044B

    Abstract: 2SC4003 ITR06242 ITR06243 STF3
    Text: Ordering number:ENN2959A NPN Triple Diffused Planar Silicon Transistor 2SC4003 High-Voltage Driver Applications Package Dimensions • High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. unit:mm 2045B [2SC4003] 2.3 5.5 1.5 6.5 5.0


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    PDF ENN2959A 2SC4003 2045B 2SC4003] 2044B 2044B 2SC4003 ITR06242 ITR06243 STF3

    2SC4002

    Abstract: ITR06235 ITR06236 ITR06237
    Text: Ordering number:ENN2960 NPN Triple Diffused Planar Silicon Transistor 2SC4002 High-Voltage Driver Applications Features Package Dimensions • High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. unit:mm 2003B [2SC4002] 5.0 4.0 5.0


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    PDF ENN2960 2SC4002 2003B 2SC4002] 2SC4002 ITR06235 ITR06236 ITR06237

    Untitled

    Abstract: No abstract text available
    Text: 2SA1730 Ordering number : EN3134A SANYO Semiconductors DATA SHEET 2SA1730 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.


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    PDF 2SA1730 EN3134A

    2044B

    Abstract: 2SC4003 ITR06242
    Text: 2SC4003 Ordering number : ENN2959B NPN Triple Diffused Planar Silicon Transistor 2SC4003 High-Voltage Driver Applications Features • • • High breakdown voltage. Adoption of MBIT process. Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C


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    PDF 2SC4003 ENN2959B 2044B 2SC4003 ITR06242

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 2974A 2SA 1700 No.2974A J SAXYO = P N P E p ita x ia l P la n a r S ilicon T ra n s is to r High-Voltage Driver Applications i F eatures . H ig h b reak d o w n voltage • A doption of M B IT pro cess • E x c e lle n t hpE lin e a rity


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    PDF 8219MO/6139MO 2974-l/3 2SA1700

    pa 2030a

    Abstract: 2SC4498 LB 1001 SANYO 2SA1722 k 2059 TRANSISTOR transistor npn d 2058 2028A bau 95
    Text: SA NY O S E M I C O N D U C T O R CO RP 2SA1722, 2SC4498 E2E D 7T=i707b QQQ73fab 3 T -3 7 -/3 « r-35-/; ^ P N P /N P N Epitaxial Planar Silicon Transistors 2059 Switching Applications 30M with Bias Resistances R1=2.2kQ, R2=10kQ F eatures 1Contains bias resistances (Rl=2.2kfl, R2= lOkfi).


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    PDF 2SA1722, 2SC4498 QQ073bb T-31-13 10ki2) 2SA1722/2SC4498-applied 2SA1722 pa 2030a 2SC4498 LB 1001 SANYO k 2059 TRANSISTOR transistor npn d 2058 2028A bau 95

    2044B

    Abstract: 2SA1700
    Text: Ordering number : EN 2974A _2 S A 1 7 0 0 PNP Epitaxial Planar Silicon Transistor High-Voltage Driver Applications Features . High breakdown voltage • Adoption of MBIT process • Excellent hpE linearity A bsolute M axim um R atings at Ta = 25°C


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    PDF 2SA1700 2044B 2SA1700

    2SA1731

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CÔRP SSE D 7 cH 7 0 7 b 0007CH1 2SA1731 1 T - 3 7 - I S PNP Epitaxial Planar Silicon Transistor 2044 High-Speed Switching Applications S3135A F e a tu re s • Adoption of FBET, MBIT processes • Large current capacity •Low collector-to-emitter saturation voltage


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    PDF 711707b 2SA1731 T-37-/5 S3135A

    2SC4003

    Abstract: bau 95
    Text: SANYO SEMICONDUCTOR CORP 22E D 7 T c1707b 0CUJ7G34 0 2SC4003 7 -Z 9 - 23 NPN Triple Diffused Planar Silicon Transistor 2044 High-Voltage Driver Applications 2959A F e a tu re s . H igh breakdow n voltage • Adoption of MBIT process • Excellent hpE lin earity


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    PDF 7cH707b 2SC4003 2SC4003 bau 95

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN 2960 _2SC4002 J SAXYO N P N Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features . High breakdown voltage • Adoption of M BIT process • Excellent hpE linearity A b s o lu t e M a x im u m R a tin g s a tTa = 25°C


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    PDF 2SC4002 2SC4002 6139MO

    2SA1730

    Abstract: No abstract text available
    Text: O rd e rin g n u m b e r : E N 3 1 3 4 2 S A 1730 No.3134 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications F eatures • Adoption of FBET, MBIT processes •Large current capacity • Low collector-to-emitter saturation voltage ■Fast switching speed


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    PDF EN3134 250mm2 2SA1730

    2SC4498

    Abstract: 2SA1722
    Text: SA NY O S E M I C O N D U C T O R CO RP 2SA1722, 2SC4498 E2E D 7T=i707b QQQ73fab 3 T -3 7 -/3 « r-35-/; ^ P N P /N P N Epitaxial Planar Silicon Transistors 2059 Switching Applications 30M with Bias Resistances R1=2.2kQ, R2=10kQ F eatures 1Contains bias resistances (Rl=2.2kfl, R2= lOkfi).


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    PDF i707b QQQ73fab 2SA1722, 2SC4498 r-35-/; 2SA1722/2SC4498-applied 2SA1722 2SC4498

    Untitled

    Abstract: No abstract text available
    Text: O rd e rin g n u m b e r: EN 3 1 3 4 SA\YO i t 2SA1730 No.3134 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications F e a tu re s •Adoption of FBET, MBIT processes • Large current capacity ■Low collector-to-emitter saturation voltage


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    PDF 2SA1730 250mm2 6139MO

    2SC4002

    Abstract: No abstract text available
    Text: Ordering number: EN 2960 No.2960 _ 2SC4002 NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features . High breakdown voltage • Adoption of MBIT process • Excellent hpE linearity Absolute Maximum Ratings at Ta = 25°C


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    PDF 2SC4002

    2005A

    Abstract: 2SC4002
    Text: Ordering num ber: EN 2 9 6 0 r. 2SC4002 No.2960 S AïYOi NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications F e a tu re s . High breakdown voltage • Adoption of MBIT process • Excellent hpE linearity A b so lu te M axim um R atin g s at Ta = 25°C


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    PDF 2SC4002 2034/2034A SC-43 7tlt17D7b 2005A 2SC4002

    2959A

    Abstract: 2044b 2SC4003
    Text: Ordering n u m b e r:E N 2 9 5 9 A 2SC4003 N 0.2959A SAiYO NPN Triple Diffused P lanar Silicon Transistor i High-Voltage Driver Applications F e a tu re s . High breakdown voltage •Adoption of MBIT process •Excellent hpE linearity A b so lu te M axim u m R a tin g s a t Ta = 25°C


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    PDF 2SC4003 300VtIE 2959A 2044b 2SC4003